Mechanism of Low Temperature Sintering (850-950.DEG.C.) of ZnO Varistor.

Room temperature sintering of polar ZnO nanosheets: II-mechanism.

In a previous work by the authors (A. Fernández-Pérez el al., Room temperature sintering of polar ZnO nanosheets: I-evidence, 2017, DOI: 10.1039/C7CP02306E), polar ZnO nanosheets were stored at room temperature under different atmospheres and the evolution of their textural and crystal properties during storage was followed. It was found that the specific surface area of the nanosheets drastica...

nthesis of ZnO nanomaterials for varistor devices

D P S ( I p i ( e M a M D acquiring more than V2 million published several scientic articles nals, has contributed four book ch than twenty international confer een international invited talks number of national awards f including the ‘Industrial Technolo prise Ireland for commercialising applications. Center for Research in Engineering Surface Dublin Institute of Technology, Kevin Stre pill...

LOW-TEMPERATURE SINTERING OF HIGH VOLTAGE GRADIENT ZnO-BASED THICK FILM VARISTORS

High voltage gradient ZnO-based thick film varistors were fabricated by low-temperature sintering. The effect of sintering temperature on electrical properties of thick film varistors was investigated. The voltage gradient of thick film varistors increased significantly to 3159.4 V/mm after sintering at 725°C for 30 min. The small average grain size with good grain boundaries was the origin for...

Metal Oxide ZnO-Based Varistor Ceramics

Low Temperature Sintering Additives for Silicon Nitride

This work deals with sintering additives for the low temperature pressureless sintering of Si3N4, via a transient liquid technique. Much attention has been given to the development of a sintering process using low-cost Si3N4 powder (Silzot HQ, Germany) as the starting material and employing sintering additives which are also both economically attractive and enable sintering at low temperatures....